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A Product Line of
Diodes Incorporated
DMP4050SSD
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-40
?
?
?
?
?
?
-0.5
? 100
V
μA
nA
I D = -250μA , V GS = 0V
V DS = -40V, V GS = 0V
V GS = ? 20V, V DS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 12)
Forward Transconductance (Notes 12 & 13)
Diode Forward Voltage (Note 12)
Reverse recovery time (Note 13)
Reverse recovery charge (Note 13)
V GS(th)
R DS(ON)
g fs
V SD
t rr
Q rr
-1.0
?
?
?
?
?
?
0.038
0.055
14
-0.86
18
12.7
-3.0
0.050
0.079
?
-1.2
?
?
V
?
S
V
ns
nC
I D = -250μA, V DS = V GS
V GS = -10V, I D = -6A
V GS = -4.5V, I D = -5A
V DS = -15V, I D = -6A
I S = -6A, V GS = 0V
I S = -2A, di/dt = 100A/μs
DYNAMIC CHARACTERISTICS (Note 13)
Input Capacitance
C iss
?
674
?
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 14)
Total Gate Charge (Note 14)
C oss
C rss
Q g
Q g
?
?
??
?
115
67.7
6.9
13.9
?
?
??
?
pF
pF
nC
nC
V DS = -20V, V GS = 0V
f = 1MHz
V GS = -4.5V
V DS = -20V
Gate-Source Charge (Note 14)
Gate-Drain Charge (Note 14)
Turn-On Delay Time (Note 14)
Q gs
Q gd
t D(on)
?
?
?
2
3.4
1.9
?
?
?
nC
nC
ns
V GS = -10V
I D = -6A
Turn-On Rise Time (Note 14)
Turn-Off Delay Time (Note 14)
Turn-Off Fall Time (Note 14)
t r
t D(off)
t f
?
?
?
3.1
31.5
12.6
?
?
?
ns
ns
ns
V DD = -20V, V GS = -10V
I D = -1A, R G ? 6.0 ?
Notes:
12. Measured under pulsed conditions. Pulse width ? 300 ? s; duty cycle ? 2%
13. For design aid only, not subject to production testing.
14. Switching characteristics are independent of operating junction temperatures.
DMP4050SSD
Document Number DS32107 Rev 3 - 2
4 of 8
www.diodes.com
April 2013
? Diodes Incorporated
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